WNT2K36 single, npn, 60v, 1a, power transistor descriptions low frequency power amplifier complementary pair with wpt2k37. features ? ultra low collector-to-emitter saturation voltage ? high dc current gain >100 ? 1a continue collector current ? small package sot-89-3l. applications ? charging circuit ? power regulator ? linear amplifier ? other power management sot-89-3l pin configuration (top view) WNT2K36 = device code yy = year ww = week marking order information device package shipping WNT2K36-3/tr sot-89-3l 1000/reel&tape 123 4 WNT2K36 yyww 123 4 c ce b 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol value unit collector-emitter voltage v ceo 60 v collector-base voltage v cbo 80 v emitter-base voltage v ebo 8 v continues collector current a 2 a continues collector current b i c 1 a pulse collector current c i cm 6 a power dissipation a 1 w power dissipation b p d 0.5 w junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55~150 c parameter symbol test conditions min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =10ma, i b =0ma 60 v collector-base breakdown voltage bv cbo i c =100ua, i e =0ma 80 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0ma 8 v collector cutoff current i cbo v cb =70v,i e =0ma 2.5 100 na emitter cutoff current i ebo v be =8v, i c =0ma 0.1 100 na collector-emitter sa turation voltage c v ce(sat) i c =500ma, i b =50ma 0.4 v base-emitter satu ration voltage c v be(sat) i c =500ma, v ce =2v 1.1 v dc current gain c h fe i c =500ma , v ce =2v 60 150 320 dc current gain c h fe i c =50ma , v ce =2v 100 180 320 WNT2K36 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) 0123456 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 ib=0.2ma ib=0.4ma ib=0.6ma ib=0.8ma ib=1.0ma ib=1.2ma ib=1.4ma ib=1.6ma i c -collector current(a) v ce -collector to emitter voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1e-3 0.01 0.1 1 10 v ce =2v ta=25 o c i c -collector current (a) v be -base to emitter voltage(v) 1e-3 0.01 0.1 1 10 1 10 100 1000 v ce(sat) -collector saturation voltage(mv) i c -collector current(a) 1e-3 0.01 0.1 1 10 5 50 500 5000 v ce =2v ta=25 o c h fe -dc current gain i c -collector current(a) WNT2K36 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-89-3l dimensions in millimeters symbol min. max. a 1.400 1.600 b 0.320 0.520 b1 0.400 0.580 c 0.350 0.440 d 4.400 4.600 d1 1.550 ref. e 2.300 2.600 e1 3.940 4.250 e 1.500 typ. e1 3.000 typ. l 0.900 1.200 WNT2K36 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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